Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A new method for precise computations on hot electrons in semiconductors is introduced. It combines attributes of Monte Carlo and distribution-function-based methods. Exploratory calculations, with a model semiconductor, are reported, including time dependence of drift velocity, steady-state longitudinal diffusivity and avalanche rate. © 1971.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
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MRS Fall Meeting 2020