Joshua E. Rothenberg, D. Grischkowsky
Optics Letters
The observation of hot carrier relaxation in silicon obtained by time-resolved reflectivity is reported. The measurements were made under low carrier density (approx. 1017 cm-3) for which carrier-carrier processes are negligible. Carriers were injected into the 0.5-μm thick film of silicon with 70-fs optical pulses at 625 nm (2.0 eV) from a dispersion-compensated colliding-pulse-mode-locked dye laser. Initially, these carriers have substantial excess kinetic energy (approx. 0.85 eV), since the bandgap of silicon is only 1.15 eV at room temperature. Changes in reflectivity of a probe beam at the same wavelength were measured as a function of time with approx. 100-fs temporal resolution and sensitivity better than one part in 106. The samples used in this study were approx. 0.5-μm silicon-on-sapphire wafers. Results are reported showing variations in reflectivity as well as in constancy across the wafer. A simple analysis considering only two reflections explains this reflectance variation and predicts the substantial signal enhancement seen in the thin silicon film.
Joshua E. Rothenberg, D. Grischkowsky
Optics Letters
Stephen E. Ralph, D. Grischkowsky
CLEO 1991
F. Tong, C.-S. Li, et al.
Electronics Letters
D. Grischkowsky
Physical Review Letters