Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Hole tunneling has been studied in single-barrier p-type AlxGa1-xAs capacitors. The current-voltage (I-V) curves with no magnetic field are remarkably complex. At low bias, in the direct tunneling regime, several reproducible voltage-controlled negative resistance (VCNR) regimes occur. VCNR is unchanged for magnetotunneling in magnetic fields B perpendicular to the accumulation layer; the voltages for minima in the derivative of I-V curves for -0.4 V≲VG≲-0.1 V are constant. For -0.8 V≲VG≲-0.4 V, and for B≳9 T, there are minima in the derivative curves whose positions are proportional to magnetic field. The origin of the complex structure for -0.4 V≲VG≲-0.1 V is uncertain but may be connected with conversion of heavy holes to light holes that tunnel through Al0.5Ga0.5As. © 1990.
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
David B. Mitzi
Journal of Materials Chemistry
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Imran Nasim, Melanie Weber
SCML 2024