Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
We demonstrate that in situ ellipsometry in conjunction with reactive ion etching is capable of providing high-resolution (≤0.3 nm) compositional depth profiles of thin (≃5 nm) silicon oxide/nitride/oxide (ONO) structures, which are superior to those which can be obtained by other methods. A low presure (75 mTorr), low power (50 W) CF4 plasma was employed to etch slowly the ONO multilayer structure with Si3N4/SiO2 etch rate ratio of ~4. The instantaneous etch rate as a function of depth was measured by automated ellipsometry, providing a measure of the composition. © 1993, The Electrochemical Society, Inc. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials