High-performance bottom electrode organic thin-film transistors

Abstract

Pentacene-based organic field effect transistors (FETs) exhibit enormous potential as active elements in a number of applications. One significant obstacle to commercial application remains: no completely lithographic process exists for forming high-performance devices. Processing constraints prevent electrodes from being lithographically patterned once the semiconductor is deposited, but depositing the electrodes before the semiconductor leads to low-performance transistors. By using self-assembled monolayers (SAMs) to change the surface energy of the metal electrodes and morphology of the pentacene subsequently grown on the electrodes, high-performance transistors may be formed using a process compatible with lithographic definition of the source and drain electrodes.