Kasra Sardashti, Richard Haight, et al.
Advanced Energy Materials
The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (∼50 Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105A cm-2) and mobilities greater than 10 cm2 V-1 s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).
Kasra Sardashti, Richard Haight, et al.
Advanced Energy Materials
Donghyeop Shin, Tong Zhu, et al.
Advanced Materials
Kejia Wang, Byungha Shin, et al.
Applied Physics Letters
Kong Fai Tai, Oki Gunawan, et al.
Advanced Energy Materials