H. Munekata, E. Mendez, et al.
Surface Science
Modulation-doped p-AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V-1 s-1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm-2. This is the highest mobility reported for holes in III-V compound semiconductors. A valence-band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.
H. Munekata, E. Mendez, et al.
Surface Science
E. Mendez, M. Heiblum, et al.
Journal of Applied Physics
Frank Stern, Steven E. Laux
Applied Physics Letters
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984