About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
Abstract
The Hall effect is used to measure the electron mobility in HfO 2 based n-channel field effect transistors with poly-Si gates. Large deviations between measured Hall and drift mobilities are explained by the presence of high concentrations of nonfixed charge (up to 4 × 10 12 cm-3). Simulated mobility curves show that the observed concentrations of fixed and nonfixed charge can estimate the measured mobility significantly better than if only the fixed charge concentration is used.