Hall effect in amorphous Gd alloy films

Abstract

Amorphous films of 0.5 to 0.75 atomic fraction Gd with 3d metals Ti, V, Cr and also with Mg, Nb, Ge, Si and Au are found to be ferromagnetic. The electrical resistivity of most samples is 150 to 200 μΩcm typical of amorphous alloys, however, for GdSi values as high as ρ{variant} ≈ 1200 μΩcm are found. The spontaneous Hall effect expressed as the tangent of the Hall angle is found to increase with the paramagnetic θ and thus it is a function of the exchange energy. © 1980.