Growth of CoSi2on Si(001): Structure, defects, and resistivity
Abstract
Epitaxial films of CoSi2on Si(001) have been grown by molecular-beam epitaxy, and their electrical and structural properties studied by resistivity and Schottky barrier height measurements, by Rutherford backscattering spectroscopy (RBS), and by transmission electron microscopy (TEM). Most growth conditions successful on Si (111) have been found to result in rnisoriented grains when applied to Si (001). However, single-orientation (001) CoSi2films, with low resistivities (16μΩ cm) and low ion channeling minimum yields (χmin= 5%) have been obtained by direct codeposition of Co and Si at — 500 °C at Co-rich stoichiometries. Single orientation (001) CoSi2films have also been obtained by using a template method on epitaxially grown Si buffer layers, but the resistivities of these films have not been as good. A Schottky barrier height of 0.71 eV has been measured for single-orientation CoSi2(001)/Si (001). This is significantly higher than the barrier height of 0.64 eV for CoSi2( 111 )/Si( 111). © 1990, American Vacuum Society. All rights reserved.