Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density Jth as 160 A/cm2 and an internal loss of 5 cm-1 were obtained. © 1993.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
T.N. Morgan
Semiconductor Science and Technology
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter