Sung Ho Kim, Oun-Ho Park, et al.
Small
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density Jth as 160 A/cm2 and an internal loss of 5 cm-1 were obtained. © 1993.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter