A. Ney, R. Rajaram, et al.
Physical Review B - CMMP
We present structural and magnetic characterization of Cr-doped InN films grown by plasma-assisted molecular beam epitaxy on c -plane sapphire substrates. Low-temperature GaN buffer layers grown by metalorganic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire. A high n -type carrier concentration of 1.5× 1020 cm-3 was measured in InN films with 3% Cr doping. Films of this type, with high structural perfection, as measured in situ, with reflection high-energy electron diffraction, exhibit a well-defined in-plane magnetic hysteresis loop for temperatures varying from 5 to 300 K. Thus, we show evidence of magnetic order in Cr-doped InN. © 2005 American Institute of Physics.
A. Ney, R. Rajaram, et al.
Physical Review B - CMMP
A. Ney, R. Rajaram, et al.
Journal of Physics Condensed Matter
A. Ney, R. Rajaram, et al.
International Symposium on Structure and Dynamics on the Nanometer Scale 2005
X. Jiang, R. Wang, et al.
Physical Review Letters