Ning Li, Charles Mackin, et al.
Advanced Materials
The effect of growth temperature on the growth mode and characterization of Si/(LaxY1-x)2O3/Si heterostructures was investigated. The fluorite and bixbyite epitaxy on silicon was investigated in the framework of a model which suggested that the mismatch between oxygen sublattice and silicon substrate was important for establishing epitaxial relations. The formation of a phase separated microstructure due to the low compressibility of epitaxial films prevented the perfect lattice matching of films to silicon.
Ning Li, Charles Mackin, et al.
Advanced Materials
Kaoutar El Maghraoui, Kim Tran, et al.
SSE 2024
Supratik Guha, Vijay Narayanan, et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Changhwan Choi, Takashi Ando, et al.
Microelectronic Engineering