Conference paper
New layout dependency in high-k/metal gate MOSFETs
M. Hamaguchi, Deleep R. Nair, et al.
IEDM 2011
The effect of growth temperature on the growth mode and characterization of Si/(LaxY1-x)2O3/Si heterostructures was investigated. The fluorite and bixbyite epitaxy on silicon was investigated in the framework of a model which suggested that the mismatch between oxygen sublattice and silicon substrate was important for establishing epitaxial relations. The formation of a phase separated microstructure due to the low compressibility of epitaxial films prevented the perfect lattice matching of films to silicon.
M. Hamaguchi, Deleep R. Nair, et al.
IEDM 2011
David B. Mitzi, Oki Gunawan, et al.
Sol Energ Mater Sol Cells
Malte J. Rasch, Charles Mackin, et al.
Nature Communications
Julian Buchel, Athanasios Vasilopoulos, et al.
IEEE JESTCS