R. Bruce, Florian Weilnboeck, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of ±30 Å. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.
R. Bruce, Florian Weilnboeck, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Gottlieb S. Oehrlein, Holly L. Williams
Journal of Applied Physics
James W. Corbett, Gottlieb S. Oehrlein, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Gottlieb S. Oehrlein, Kevin K. Chan, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films