The DX centre
T.N. Morgan
Semiconductor Science and Technology
Spin-dependent electrical resistivity due to scattering by displaced interface atoms has been computed for a layered CuCo superlattice, using full-potential multiple-scattering theory with no free parameters. The magnetoresistance ratio Delta R/R( up arrow up arrow ) obtained for this scattering mechanism is 25.03. When interface resistivity, weighted by interpretation concentration c approximately=0.10, is combined with bulk resistivity, Delta R/R is in the expected experimental range for adjacent CuCoCu layers. This resistance mechanism produces spin-dependent steady-state chemical potentials, relevant to the bipolar spin switch.
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, J.S. Lew
Journal of Crystal Growth
John G. Long, Peter C. Searson, et al.
JES
M. Hargrove, S.W. Crowder, et al.
IEDM 1998