M. Potemski, J.C. Maan, et al.
Surface Science
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
M. Potemski, J.C. Maan, et al.
Surface Science
C.A. Chang, L.L. Chang, et al.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
J.A. Brum, P. Voisin, et al.
Surface Science
J. Beerens, G. Grégoris, et al.
Physical Review B