PaperPtSi contact metallurgy formed by three-temperature annealing sequences and short annealing timeChin-An Chang, Armin SegmüllerJournal of Applied Physics
PaperReduced Al/PtSi reaction up to 600°C using an amorphous carbon barrier layerChin-An ChangJournal of Applied Physics
PaperResonant tunneling of holes in AlAs-GaAs-AlAs heterostructuresE. Mendez, W.I. Wang, et al.Applied Physics Letters
PaperHigh Tc superconducting thin films by rapid thermal annealing of Cu/BaO/Y2O3 layered structuresQ.Y. Ma, T.J. Licata, et al.Applied Physics Letters