Shachar Don-Yehiya, Leshem Choshen, et al.
ACL 2025
GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The current collapse in GaN HEMTs of < 150 × 150 μm2 patterns is 2%-6%, which is remarkably lower than the devices on blanket materials. We believe that stress relaxation resulting from substrate patterning contributes to the reduction of current collapse. By creating small GaN patterns on a larger diameter Si wafer, co-integration of GaN with Si technology may be possible.
Shachar Don-Yehiya, Leshem Choshen, et al.
ACL 2025
Anming Gu, Edward Chien, et al.
ICLR 2025
Jannis Born, Matteo Manica
Nature Machine Intelligence
Toufique Ahmed, Premkumar Devanbu, et al.
MSR 2025