Gallium arsenide optoelectronic IC's for computer networks

Abstract

The physics of gallium arsenide offers distinct advantages compared to silicon for device applications based on mobility, epitaxial bandgap engineering, and optoelectronic function. Because of these advantages, compared to silicon, gallium arsenide transistors and optoelectronic devices are likely to be found in future computer systems. I first discuss material advantages and challenges for commercial realization of these applications. Examples of these potential applications in communication and computer systems are given. Highly integrated optoelectronic circuits will likely be found in optical links for data communications. The state of the art will be illustrated with recent results from a joint program that spans several IBM research and development laboratories. A demonstration of a compactly packaged gigabit per second optical data link with error rates low enough for computer communications has been made with two highly integrated MESFET chips and one laser array. © 1990.