GaAs buffer layers grown at low substrate temperatures using As₂ and the formation of arsenic precipitates

Abstract

We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.