Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have grown GaAs layers by molecular beam epitaxy at low substrate temperatures (250°C) using the dimer arsenic source As2. Following a one hour anneal at 600°C, the GaAs layers were examined with transmission electron microscopy. The GaAs layers contained arsenic precipitates of average diameter 100 Å and density of 1017 cm-3. © 1991.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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INFORMS 2021