Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Using high-resolution medium-energy ion scattering, we have determined the surface As and Ga coverages of the c(4×4), c(2×8), (2×4), (2×6), and c(8×2) reconstructions of GaAs(001). All surfaces are more Ga rich than predicted by current structural models. The results are explained in terms of charge neutrality and Coulomb repulsion between As lone-pair orbitals, leading to As replacement by Ga in the first and second surface layers. © 1993 The American Physical Society.
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997