A.G. Schrott, K.N. Tu, et al.
Physical Review B
It has been found that annealing Pd-Er deposits on a (001) silicon surface results in the formation of isolated submicron islands of Pd2Si with two epitaxially oriented habits. By contrast, when Pd is annealed on a (111) silicon substrate, Pd2Si is formed with full coverage and a specific epitaxy.
A.G. Schrott, K.N. Tu, et al.
Physical Review B
J.J. Chu, L.J. Chen, et al.
Journal of Applied Physics
A. Cros, K.N. Tu
Journal of Applied Physics
L.T. Shi, K.N. Tu
Applied Physics Letters