Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

Joseph M. Jasinski

doi:10.1016/0009-2614(93)80144-E

Chemical Physics Letters

Paper

27 Aug 1993

Formation of gas-phase silyl radicals in the atomic hydrogen etching of silicon

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Abstract

Mass spectrometric evidence is presented for the direct formation of gas-phase silyl radical, SiH3, as a product of the heterogeneous etching reaction of silicon films with hydrogen or deuterium atoms. © 1993.

Paper

Silane pyrolysis rates for the modeling of chemical vapor deposition

Bernard S. Meyerson, Joseph M. Jasinski

Journal of Applied Physics

Paper

Surface loss coefficients for the silyl radical

Joseph M. Jasinski

Journal of Physical Chemistry

Paper

Mass spectrometric studies of remote helium plasma dissociation of silane

Joseph M. Jasinski

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

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High vibrational overtone photochemistry of 1-cyclopropylcyclobutene

Joseph M. Jasinski, Joan K. Frisoll, et al.

Journal of Physical Chemistry

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Abstract

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Silane pyrolysis rates for the modeling of chemical vapor deposition

Surface loss coefficients for the silyl radical

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