Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron-hole pairs and doping by UV induced surface desorption contribute to the conductivity.
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Robert W. Keyes
Physical Review B