Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We investigate the spin relaxation of optically excited charge carriers in a variety of GaAs-AlxGa1-xAs quantum wells and superlattices at low temperatures by ultrafast time-resolved photoluminescence spectroscopy. Structures with uniform static optical properties show a markedly varied spin scattering in the time domain, thereby requiring a series of studies with systematically modified epitaxial growth conditions. A multiexponential spin relaxation is seen in quantum wells with a fast initial component of less than 1 ps and a subsequent relaxation within 150 ps. For the same growth conditions, the polarization decay time in superlattices approaches bulk values, indicating a dimensionality dependence of the spin scattering. © 1991 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME