F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
We report on the first observation of 1s to 2p absorption by excitons in pure silicon. A group of strong lines at 10.2, 11.4 and 12.0 meV is observed along with a continuum extending to higher frequency. A theoretical model for the excitonic absorption accounts well for the observed structure. © 1978.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Hiroshi Ito, Reinhold Schwalm
JES
T. Schneider, E. Stoll
Physical Review B
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials