Factors controlling pattern formation in chemically amplified resists at sub-100 nm dimensions

Abstract

At minimum feature dimensions below 100 nm, the required dimensional tolerances for pattern formation in integrated circuit fabrication approach the length scales of the molecular components and processes typically found in a resist film. This paper summarizes recent experimental work aimed at an improved understanding of photoacid diffusion and line-edge roughness, two key factors that influence dimensional control in chemically amplified resists. © 1999 TAPJ.