Mechanisms and models of Si film growth from SiH4 and Si2H6
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
An investigation of the temperature programmed desorption (TPD) of CO and D2 from Ni (111) has been carried out. It has been shown that a differential method for the extraction of the kinetic parameters, threshold temperature programmed desorption (TTPD), can be applied with accuracy near the limit of zero coverage. In this limit, agreement is found between integral and differential methods for kinetic parameter evaluation. The factors which limit the applicability of TTPD are explored and a method to verify its proper application is presented. © 1987 American Institute of Physics.
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
S. Gates, D.D. Koleske, et al.
Applied Physics Letters
Szetsen S. Lee, Maynard J. Kong, et al.
Journal of Physical Chemistry