Extendibility of NiPt silicide to the 22-nm node CMOS technology

Abstract

This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach 1×10-8 Ω-cm2 for both n+ and p+ Si by using novel test structures of small silicided contact with varied areas from 20-nm diameter to 260-nm diameter by e-beam lithography fabricated on highly doped substrate made by conventional source drain implantation. It demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22nm node. ©2008 IEEE.