EXPERIMENTAL AND CHEMICAL KINETIC MODELLING STUDY OF SILICON CVD FROM MONOSILANE AND DISILANE.

Abstract

The growth of silicon from silane and disilane has been studied under low (LP) and atmospheric (AP) pressure CVD conditions. It was found that the greater LPCVD growth rate using Si//2H//6 is due to its higher surface decomposition probability. However, this advantage is compromised by severe film thickness, non-uniformities. Difference between the two source gases become less important at the higher temperatures employed in APCVD. These results are explained by analyzing the various CVD phenomena within the context of a gas phase reaction model and some simple assumptions about the relative surface reactivities of species likely to be present at the growth interface.