William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Review
Evidence for a mobility edge in inversion layers
Abstract
The published transport properties of carriers in silicon inversion layers suggest the existence of a mobility edge separating conducting from localized states at low temperature. Further experimental tests of the mobility-edge model are proposed. © 1974 The American Physical Society.
Related
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Sung Ho Kim, Oun-Ho Park, et al.
Small