Gary Patton
S3S 2012
The transition to fully-depleted (FD) transistor technology is taking place today, either towards planar architectures on SOI wafers [1] or towards 3D-like architectures (FinFET or Trigate) [2]. The reason for this change is better electrostatic control, and reduction or even complete elimination of random dopant fluctuations, leading to much improved Vt variability. © 2012 IEEE.
Gary Patton
S3S 2012
Q. Liu, A. Yagishita, et al.
CSTIC 2011
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VLSI-TSA 2013
Bruce Doris, B. Desalvo, et al.
Solid-State Electronics