Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

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Growth behavior of (C₂H₅)₂GaCl and AsH₃ based GaAs: low reactor pressure and temperatures

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Abstract

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