Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

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Abstract

Related

Selective epitaxy of MOVPE GaAs using diethyl gallium chloride

Thermal stability of Si1-xCx/Si strained layer superlattices

Wave morphologies on the surfaces of GaAs and Ga0.65Al0.35As grown LPE

The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System

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Wave morphologies on the surfaces of GaAs and Ga_0.65Al_0.35As grown LPE