Etch pits and dislocations in {100} GaAs wafers

J. Angilello; R.M. Potemski; G.R. Woolhouse

doi:10.1063/1.321833

Journal of Applied Physics

Paper

02 Sep 2008

Etch pits and dislocations in {100} GaAs wafers

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Abstract

The reliability of molten KOH for revealing dislocations intersecting {100} faces of GaAs has been tested using transmission x-ray topography. It is found to be a "faithful" etch.

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Properties of high-purity Al_xGa_1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

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Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

Conference paper

Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)

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The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs

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Abstract

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Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors

Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures

Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)

The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme on p-GaAs

Properties of high-purity Al_xGa_1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors