Journal of Applied Physics

Paper

17 Jun 2004

Epitaxy of germanium films on gallium arsenide by vacuum evaporation

View publication

Abstract

No abstract available.

Related

Conference paper

CHANNELING OF IONS NEAR THE SILICON less than 001 greater than AXIS.

Paper

Boron diffusion in silicon at high concentrations

Paper

The reaction of oxygen with silicon and germanium at elevated temperatures by weight loss measurement

Paper

Gaseous Equilibria in the Germanium Iodine System

View all publications