Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy

Abstract

The epitaxial growth of silicon on Si(001)-(2x 1) substrates at temperatures between 580 and 850 K is studied using scanning tunneling microscopy (STM). The growth is strongly anisotropic, forming long narrow structures only a few dimers wide but more than 100 A long. Models are proposed for the two types of antiphase boundaries that are observed on the epitaxially grown surfaces. © 1990, American Vacuum Society. All rights reserved.