Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to ∼1.8 erg/cm2 when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices. © 2013 AIP Publishing LLC.
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
David B. Mitzi, Teodor K. Todorov, et al.
PVSC 2010
David B. Mitzi, Min Yuan, et al.
Thin Solid Films
Liam Collins-McIntyre, M.D. Watson, et al.
AIP Advances