Energy levels in quasi uni-dimensional semiconductor heterostructures

J.A. Brum; G. Bastard; L.L. Chang; L. Esaki

doi:10.1016/0749-6036(87)90176-5

Superlattices and Microstructures

Paper

01 Jan 1987

Energy levels in quasi uni-dimensional semiconductor heterostructures

View publication

Abstract

We report calculations of valence levels in quasi one-dimensional semiconductor heterostructures. Subband mixing is considered and the subband dispersions along the wire-axis direction are calculated for GaAs Ga(Al)As quantum wires. © 1987.

Paper

Theory of temperature-induced Mott transitions

Ellen J. Yoffa, David Adler

Physical Review B

Conference paper

Investigation of the numerical accuracy of transmission line-based transient analysis of high-speed interconnects and cables

Andreas C. Cangellaris, Karen M. Coperich, et al.

EMC 2001

Paper

Miscibility in organic/inorganic hybrid nanocomposites suitable for microelectronic applications: Comparison of modulated differential scanning calorimetry and fluorescence spectroscopy

Q.R. Huang, Ho-Cheol Kim, et al.

Macromolecules

Paper

Harmonic analysis in rheological property measurement

Thomas E. Karis, C. Mark Seymour, et al.

Rheologica Acta

View all publications

Abstract

Related

Theory of temperature-induced Mott transitions

Investigation of the numerical accuracy of transmission line-based transient analysis of high-speed interconnects and cables

Miscibility in organic/inorganic hybrid nanocomposites suitable for microelectronic applications: Comparison of modulated differential scanning calorimetry and fluorescence spectroscopy

Harmonic analysis in rheological property measurement