P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates. © 2011 Elsevier B.V. All rights reserved.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter