Emulating synaptic weights with thin films transistors based on ferroelectric hafnia

Abstract

This workshop arising from truly interdisciplinary EU projects BeFerroSynaptic, IN-FET and Crossbrain, showing the latest developments in neuromorphic Metal-Oxide FeFET devices based on Hafnium–zirconium oxide (HZO). Firstly, an introductory insight will be given into FeFET technology, then the development of new metal-oxide materials to be used as FeFET channel, will be presented. The talk will span from material/devices to systems and integration challenges. Among these: the synaptic operation of advanced CMOS- compatible FeFET devices.