Conference paper
Prospect for active matrix displays on plastic
S. Gates
MRS Spring Meeting 1997
Submonolayer coverages of B, Sn, and Ge are prepared on Si(100) surfaces, and characterized using time-of-flight scattering and recoiling spectroscopy. The dopant]] marks" the initial Si interface, and Si is grown on top of the]] marked" surface, and is designated Si*. Attenuation of the elemental B, Sn, and Ge signals by Si* is used to evaluate Si precursors for atomic layer epitaxy, and compare the thermal stability of Si*/B/Si(100), Si*/Sn/Si(100), and Si*/Ge/Si(100) structures.
S. Gates
MRS Spring Meeting 1997
S. Gates, D.D. Koleske
Thin Solid Films
S. Gates, B.A. Scott, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
D.D. Koleske, S. Gates
Journal of Applied Physics