Jeehwan Kim, Homare Hiroi, et al.
Advanced Materials
Transient photocapacitance (TPC) spectra were obtained on a series of Cu 2ZnSn(Se,S) 4 absorber devices with varying Se ratios, providing bandgaps (E g) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with E g ≤ 1.2 eV and were near 6.5% for devices with E g ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices. © 2012 American Institute of Physics.
Jeehwan Kim, Homare Hiroi, et al.
Advanced Materials
Oki Gunawan, Tayfun Gokmen, et al.
PVSC 2012
Teodor Todorov, Hiroki Sugimoto, et al.
IEEE Journal of Photovoltaics
Jeyakumar Ramanujam, Amit Verma, et al.
Progress in Materials Science