Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A seven-layer slab was used to model the ideal GaAs(110) surface. Two coverages, t=1/2 and 1 monolayer (ML) of Na atoms on the surface were studied. The total-energy calculations with the self-consistent pseudopotential method was used to determine the positions of Na atoms on the ideal GaAs(110) surface. We find that the charge transfer is from the Na to the Ga atoms. The shift of the Fermi level with respect to the valence-band maximum from coverage of 1/2 to 1 ML is 0.33 eV downward. This result agrees reasonably with the measured value of 0.2 eV for the n-type GaAs(110) surface. © 1989 The American Physical Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997