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Surface Science
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Electronic properties of InAsGaSb superlattices

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Abstract

Experimental results in InAs-GaSb superlattices are reviewed, focussing on the difference between this type of superlattice and that of GaAsGa1−xAlxAs. The emphasis is on electronic properties obtained from optical and magneto experiments, including semiconductor-semimetal transitions observed recently. The process of fabrication by molecular beam epitaxy and the characteristics of heterojunctions will also be briefly described. © 1980, All rights reserved.

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Surface Science

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