Electronic effects in the specific heat of silicon

Robert W. Keyes

doi:10.1103/PhysRevB.12.2539

Physical Review B

Review

15 Sep 1975

Electronic effects in the specific heat of silicon

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Abstract

Recent interest in the low-temperature specific heat of heavily doped silicon may help to resolve questions posed by measurements of the dependence of the Debye temperature of germanium on doping. © 1975 The American Physical Society.

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