Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We identify polytope models of tetrahedrally bonded amorphous semiconductors with the ideal covalently bonded Si regions of a-Si. For these regions we calculate the optical absorption spectrum and find a relatively weak absorption edge. Disorder-enhanced absorption is a result of localized states. Within the context of a quantum well model the energy dependent optical matrix element is related to well size. © 1983.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P. Alnot, D.J. Auerbach, et al.
Surface Science
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Ming L. Yu
Physical Review B