J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
We identify polytope models of tetrahedrally bonded amorphous semiconductors with the ideal covalently bonded Si regions of a-Si. For these regions we calculate the optical absorption spectrum and find a relatively weak absorption edge. Disorder-enhanced absorption is a result of localized states. Within the context of a quantum well model the energy dependent optical matrix element is related to well size. © 1983.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989