Publication
Journal of Non-Crystalline Solids
Paper

Electronic consequences of ideal local order in amorphous Si

View publication

Abstract

We identify polytope models of tetrahedrally bonded amorphous semiconductors with the ideal covalently bonded Si regions of a-Si:H. For these regions we calculate the optical absorption spectrum and find a relatively weak absorption edge. Disorder-enhanced absorption is a result of localized states. Within the context of a quantum well model the energy dependent optical matrix element is related to well size. © 1983.

Date

Publication

Journal of Non-Crystalline Solids

Authors

Topics

Share