Electron-phonon interaction and transport in semiconducting carbon nanotubes

Abstract

We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight-binding model. The mobility is derived using a multiband Boltzmann treatment. At high fields, the dominant scattering is interband scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ∼70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent. © 2005 The American Physical Society.