A. Gangulee, F.M. D'Heurle
Thin Solid Films
Amorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D‐A4 is observed after hot‐implantation (650°C) with nitrogen ions. It is thought to be a spin‐one‐center arising from a small D‐tensor interaction with 〈111〉 symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. Copyright © 1974 WILEY‐VCH Verlag GmbH & Co. KGaA
A. Gangulee, F.M. D'Heurle
Thin Solid Films
E. Burstein
Ferroelectrics
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Frank Stem
C R C Critical Reviews in Solid State Sciences