Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We predict a new effect, electron-hole exchange transitions, which occur at all amphoteric defects. We show that these transitions play a dominant role in electron-hole recombination at deep centers. In particular our results demonstrate that recent conflicting data on gold-doped silicon are all consistent with the observed donor and acceptor levels belonging to the same center. © 1985 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
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ACS Nano
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Surface Review and Letters
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Small