Alan C. Warren, J. Woodall
ECS Meeting 1989
Spatially resolved electron-energy-loss scattering has been used to study changes in the inelastic scattering near the bulk band-gap energy for locations near the GaAs-Ga0.85In0.15As interface. We observe the expected bulk band gap on either side of the interface. At a single interface-misfit dislocation we observe scattering which is consistent with an excitation of transitions between a localized state near the dislocation and the crystal conduction band. Within this interpretation, the energy of the state is estimated to be 0.7 0.05 eV above the GaAs valence-band maximum. © 1986 The American Physical Society.
Alan C. Warren, J. Woodall
ECS Meeting 1989
J. Woodall
JES
P.E. Batson
Microscopy of Semiconducting Materials 1991
C.Y. Wong, C.R.M. Grovenor, et al.
Journal of Applied Physics