Electron energy levels in GaAs-Ga1-xAlxAs heterojunctions

Abstract

Calculated results for energy levels of electrons in GaAs-Ga1-xAlx As heterojunctions are presented and their sensitivity to various parameters including acceptor doping level in the GaAs, heterojunction barrier height, effective-mass and dielectric-constant discontinuities, interface grading, and ambient temperature is examined. © 1984 The American Physical Society.